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| TEMPFET(R) BTS 240A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 240A VDS 50 V ID 58 A RDS(on) 0.018 Package TO-218AA Ordering Code C67078-A5100-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 73 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 20 58 21.0 232 147 2200 170 - 55 ... + 150 E 55/150/56 K/W 0.74 45 C - W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C Short circuit dissipation, Tj = - 55 ... + 150 C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 240A Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 10 V, ID =47 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 47 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS 50 - 3.0 - 3.5 V VGS(th) 2.5 IDSS - - 0.1 10 1.0 100 A IGSS - - 10 2.0 0.012 100 4.0 0.018 nA A - RDS(on) gfs 20.0 43.0 2.9 1.4 0.5 50 150 350 250 - S nF - 4.3 2.1 0.8 75 230 560 330 ns Ciss Coss - Crss - - - - - Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t r Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 t f Semiconductor Group 2 BTS 240A Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 116 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD - - - - - 1.6 100 0.3 58 232 A V 2.0 ns - C - t rr - Q rr - VTS(on) 0.7 - 1.4 - - - 0.1 0.2 - - 1.5 10 V ITS(on) - - 10 600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff Semiconductor Group 3 BTS 240A Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol 1 Examples 2 - Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 C, before short circuit VDS VGS ISC PSC tSC(off) 15 6.4 < 147 < 2200 < 25 30 5.1 < 67 < 2000 < 25 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... +150C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C Semiconductor Group 4 BTS 240A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C Semiconductor Group 5 BTS 240A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 47 A, VGS = 10 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V Semiconductor Group 6 BTS 240A Continuous drain current ID = f (TC) Parameter: VGS 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 240A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 240A Package Outlines TO-218 AA Standard Ordering Code C67078-S5100-A3 Semiconductor Group 9 |
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